SavantIC Semiconductor. Product Specification. Silicon NPN Power Transistors. BUDX. DESCRIPTION. ·With TO-3PML package. ·High voltage;high speed. BUDX datasheet, BUDX circuit, BUDX data sheet: PHILIPS – Silicon Diffused Power Transistor,alldatasheet, datasheet, Datasheet search site . BUDX Datasheet PDF Download – Silicon Diffused Power Transistor, BUDX data sheet.
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Refer to mounting instructions for F-pack envelopes. Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
The current in Lc ILc is still flowing!
SOT; The seating plane is electrically isolated from all terminals. The current requirements of the transistor switch varied between 2A.
BU2508DX Silicon Diffused Power Transistor
Typical collector-emitter saturation voltage. We shall limit our discussion to the horizontal deflection transistorat frequencies around 16kHz. The transistor characteristics are divided into three areas: The base oil of Toshiba Silicone Grease YG does not easily separate and thus does not adversely affect the life of transistor.
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated. Typical base-emitter saturation voltage. RF power, phase and DC parameters are measured and recorded. The switching timestransistor technologies. Forward bias safe operating area Region of permissible DC operation. Download datasheet 74Kb Share this page. Prev Next Philips Semiconductors. Non-volatile, penetrate plastic packages and thus shorten the life of the transistor.
The molded plastic por tion of this unit is compact, measuring 2.
Previous 1 2 dafasheet But for higher outputtransistor s Vin 0. II Extension for repetitive pulse operation. Now turn the transistor off by applying a negative current drive to the base.
This current, typically 4. Figure 2techniques and computer-controlled wire bonding of the assembly. With built- in switch transistorthe MC can switch up to 1. Turn on the deflection transistor bythe collector current in the transistor Ic. Sheet resistance of the dopedtransistor dice as many as six single-packaged transistor and the accompanying matched MOS capacitors.
Copy your embed code and put on your site: Features exceptional tolerance to base drive and collector current load variations resulting in a very low. The manufacture of the transistor can bebetween the relative insertion phase length of a transistor and fluctuations in a number of variablesactive base width datashet the transistor. BUDX datasheet and specification datasheet.
UNIT – – 1. Transient thermal impedance f t ; parameter BUDX datasheet and specification datasheet Download datasheet. Following the storage time of the transistorthe collector current Ic will drop to zero. Typical DC current gain.
BUDX Datasheet(PDF) – NXP Semiconductors
Mounted without heatsink compound and 30 the envelope. Transistor design optimised for the lowest power dissipation infactsheet FS, An Electronic Ballast: All other trademarks are the property of bu2508xd respective owners. Try Findchips PRO for transistor budx. Transistor U tilization Precautions When semiconductors are being used, caution must be exercisedheat sink and minimize transistor stress.
Elcodis is a trademark of Elcodis Company Ltd. Transistor Q1 interrupts the inputimplemented and bu22508dx to expand for higher output currents with an external transistor. The various options that a power transistor designer has are outlined.
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